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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2816 DESCRIPTION With TO-220C package High voltage High speed APPLICATIONS For high voltage ,high speed and high power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER CHA IN Collector current Base current Collector-base voltage Collector-emitter voltage E SEM NG Open emitter Open base Open collector CONDITIONS OND IC TOR UC VALUE 500 400 7 5 10 2.5 UNIT V V V A A A W ae ae Emitter-base voltage Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25ae 40 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SC2816 SYMBOL TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; RBE= ;L=100mH 400 V V(BR)EBO Emitter-base breakdown voltage IE=10mA ; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.5A 1.0 V VBEsat Base-emitter saturation voltage IC=2.5A; IB=0.5A 1.5 V ICBO Collector cut-off current VCB=400V ;IE=0 50 |I A ICEO Collector cut-off current VCE=350V ; RBE= 50 |I A hFE-1 DC current gain IC=2.5 A ; VCE=5V hFE-2 Switching times IN DC current gain IC=5 A ; VCE=5V ton Turn-on time ts Storage time CHA E SEM NG OND IC TOR UC 7 0.5 |I s 1.5 |I s 15 IC=5A; IB1=-IB2=1A VCC=150V tf Fall time 0.5 |I s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2816 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2816 CHA IN E SEM NG OND IC TOR UC 4 |
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